?2000 fairchild semiconductor international rev. a, february 2000 ksC5802D npn triple diffused planar silicon transistor absolute maximum ratings t c =25 c unless otherwise noted electrical characteristics t c =25 c unless otherwise noted symbol parameter value units v cbo collector-base voltage 1500 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 6 v i c collector current (dc) 10 a i cp collector current (pulse) 30 a p c collector dissipation (t c =25 c) 60 w t j junction temperature 150 c t stg storage temperature - 55 ~ 150 c symbol parameter test condition min. typ. max. units i ces collector cut-off current v ce = 1400v, v be =0 1 ma i cbo collector cut-off current v cb = 800v, i e = 0 10 a i ebo emitter cut-off current v eb = 4v, i c = 0 50 250 ma h fe1 h fe2 dc current gain v ce = 5v, i c = 1a v ce = 5v, i c = 6a 15 7 40 11.5 v ce (sat) collector-emitter saturation voltage i c = 6a, i b = 1.5a 3 v v be (sat) base-emitter saturation voltage i c = 6a, i b = 1.5a 1.5 v t f fall time v cc = 200v, i c = 6a i b1 = 1.2a, i b2 = - 2.4a r l = 33.3 ? 0.1 0.3 s ksC5802D high voltage color display horizontal deflection output (built in damper diode) high breakdown voltage bv cbo =1500v high speed switching : t f =0.1 s (typ.) wide s.o.a for c-monitor(69khz) c b e 50 ? typ. equivalent circuit to-3pf 1.base 2.collector 3.emitter 1
?2000 fairchild semiconductor international ksC5802D rev. a, february 2000 typical characteristics figure 1. static characterisic figure 2. dc current gain figure 3. collector-emitter saturation voltage figure 4. base-emitter on voltage figure 5. switching time figure 6. safe operating area 0246810 0 1 2 3 4 5 6 7 8 9 10 i b = 500ma i b = 600ma i b = 400ma i b = 900ma i b = 800ma i b = 700ma i b = 1.0a i b = 300ma i b = 200ma i b = 100ma i c [a], collector current v ce [v], collector-emitter voltage 0.1 1 10 1 10 100 v ce =5v h fe , dc current gain i c [a], collector current 0.1 1 10 0.01 0.1 1 10 i c =5i b i c =3i b v ce (sat)[mv], saturation voltage i c [a], collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2 4 6 8 10 12 v ce = 5v i c [a], collector current v be [v], base-emitter voltage 0.1 1 10 0.1 1 10 resistive load v cc =200v i c =6a i b1 =1.2a tf tstg tstg[ s], storage time t f [ s], fall time -i b2 [a], base current 1 10 100 1000 0.01 0.1 1 10 100 single pulse tc=25 100 s 10 s 1ms dc 10ms 100ms i c [a], collector current v ce [v], collector-emitter voltage
?2000 fairchild semiconductor international ksC5802D rev. a, february 2000 typical characteristics (continued) figure 7. reverse bias safe operating area figure 8. power derating 10 100 1000 10000 0.1 1 10 100 i c = 5i b1 = 5i b2 l = 500 h single pulse i b2 = -1a const (at i c >= 5a) i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60 70 80 p d [w], power dissipation t c [ ], case temperature
15.50 0.20 ?.60 0.20 26.50 0.20 4.50 0.20 10.00 0.20 16.50 0.20 10 16.50 0.20 22.00 0.20 23.00 0.20 1.50 0.20 14.50 0.20 2.00 0.20 2.00 0.20 2.00 0.20 0.85 0.03 2.00 0.20 5.50 0.20 3.00 0.20 (1.50) 3.30 0.20 2.00 0.20 4.00 0.20 2.50 0.20 14.80 0.20 3.30 0.20 2.00 0.20 5.50 0.20 0.75 +0.20 ?.10 0.90 +0.20 ?.10 5.45typ [5.45 0.30 ] 5.45typ [5.45 0.30 ] to-3pf package demensions ?2000 fairchild semiconductor international rev. a, february 2000 ksC5802D dimensions in millimeters
?2000 fairchild semiconductor international rev. e trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. acex? bottomless? coolfet? crossvolt? e 2 cmos? fact? fact quiet series? fast ? fastr? gto? hisec? isoplanar? microwire? pop? powertrench ? qfet? qs? quiet series? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? uhc? vcx? disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor international. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only.
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